Title :
D-band subharmonic mixer with silicon planar doped barrier diodes
Author :
Güttich, Ulrich ; Strohm, Karl M. ; Schäffler, Friedrich
Author_Institution :
Telefunken Systemtech., Ulm, Germany
fDate :
2/1/1991 12:00:00 AM
Abstract :
A subharmonically pumped finline mixer applying a silicon planar doped barrier diode has been developed for D-band frequencies. Diode processing and DC characteristics are discussed, and a circuit description is given. Excellent mixing properties (minimum conversion loss) of 10.8 dB) favor this mixer configuration for application in low-cost receivers operating at those RF bands (above 120 GHz) where fundamental low-noise, solid-state oscillators are not currently available
Keywords :
elemental semiconductors; microwave integrated circuits; mixers (circuits); semiconductor diodes; silicon; 10.8 dB; 120 GHz; D-band; DC characteristics; EHF; MIC; MM-wave mixer; Si; finline mixer; low-cost receivers; minimum conversion loss; planar doped barrier diodes; subharmonic mixer; Doping; Finline; Gold; Microstrip; Molecular beam epitaxial growth; Ohmic contacts; Radio frequency; Schottky diodes; Silicon; Substrates;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
