• DocumentCode
    810774
  • Title

    Carrier concentration effects on hot electron noise in n+nn+ Al0.25Ga0.75As devices [microwave transistors]

  • Author

    de Murcia, M. ; Richard, E. ; Llinares, P. ; Pascal, F. ; Vanbremeersch, J.

  • Author_Institution
    Centre d´´Electron. Univ. des Sci. et Tech. du Languedoc, Montpellier, France
  • Volume
    32
  • Issue
    2
  • fYear
    1996
  • fDate
    1/18/1996 12:00:00 AM
  • Firstpage
    137
  • Lastpage
    138
  • Abstract
    High frequency noise of Al0.25Ga0.75As resistors with two different doping levels was measured against electric field. The noise temperatures and the diffusion coefficients are discussed in their relation to carrier concentrations. The results show that l/f noise is observed in the hot carrier range
  • Keywords
    1/f noise; III-V semiconductors; aluminium compounds; carrier density; doping profiles; electric noise measurement; gallium arsenide; hot carriers; microwave transistors; semiconductor device noise; Al0.25Ga0.75As; carrier concentration effects; diffusion coefficients; doping levels; high frequency noise; hot electron noise; l/f noise; microwave transistors; n+nn+ devices; noise temperatures;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960093
  • Filename
    490885
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=810774