DocumentCode
810894
Title
A 156 GHz single-stage GaAs dual-gate FET monolithic analog frequency divider with reduced input threshold power
Author
Kanazawa, Kunihiko ; Hagio, Masahiro ; Kazumura, Masaru ; Kano, Gota
Author_Institution
Matsushita Electron. Corp., Osaka, Japan
Volume
36
Issue
12
fYear
1988
Firstpage
1908
Lastpage
1912
Abstract
Use of a dual-gate FET mixer and a rejection filter has resulted in a simplification of the circuit configuration and a reduction of the input threshold power, respectively, of an analog frequency divider MMIC. The device exhibits an input threshold power of 1.4 dBm in the operating frequency band from 14.2 GHz to 15.3 GHz. The circuit promises to be very valuable for the development of monolithic phase-locked loops (PLLs).<>
Keywords
III-V semiconductors; MMIC; field effect integrated circuits; frequency dividers; gallium arsenide; 14.2 to 15.3 GHz; GaAs; III-V semiconductors; MMIC; SHF; dual-gate FET mixer; input threshold power reduction; monolithic PLL; monolithic analog frequency divider; phase-locked loops; single stage configuration; Equivalent circuits; Feedback circuits; Feedback loop; Frequency conversion; Gallium arsenide; Microwave FETs; Microwave communication; Microwave filters; Power amplifiers; Signal design;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.17432
Filename
17432
Link To Document