A Dynamical Power-Management Demonstration Using Four-Terminal Separated-Gate FinFETs

Author

Endo, K. ; Ishikawa, Y. ; Liu, Y.X. ; Matsukawa, T. ; O´uchi, S. ; Ishii, K. ; Masahara, M. ; Tsukada, J. ; Yamauchi, H. ; Sekigawa, T. ; Koike, H. ; Suzuki, E.

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki

Volume

28

Issue

5

fYear

2007

fDate

5/1/2007 12:00:00 AM

Firstpage

452

Lastpage

454

Abstract

Dynamically power-controllable CMOS inverters have been successfully demonstrated using separated-gate four-terminal (4T) FinFETs. The threshold voltages of the both pMOS and nMOS FinFETs can be flexibly controlled by applying a bias voltage to the control-gate. We demonstrate for the first time that the power consumption of the CMOS inverter can be dynamically controlled using the variable threshold voltage provided by the 4T-FinFET. These results strongly suggest the advantage of the power-managed CMOS circuits using 4T-FinFETs

Keywords

CMOS integrated circuits; invertors; power MOSFET; power control; 4T-FinFET; dynamical power-management; power-controllable CMOS inverters; separated-gate four-terminal FinFET; threshold voltages control; variable threshold voltage; CMOS technology; Energy consumption; Etching; Fabrication; FinFETs; Inverters; MOS devices; MOSFET circuits; Threshold voltage; Voltage control; $V_{rm th}$ control; CMOS inverter; FinFET; etch-back; four-terminal (4T); power management;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.895451

Filename

4160019