Title :
A High-Performance Body-Tied FinFET Bandgap Engineered SONOS (BE-SONOS) for nand-Type Flash Memory
Author :
Hsu, Tzu-Hsuan ; Lue, Hang Ting ; King, Ya-Chin ; Hsieh, Jung-Yu ; Lai, Erh-Kun ; Hsieh, Kuang-Yeu ; Liu, Rich ; Lu, Chih-Yuan
Author_Institution :
Emerging Central Lab., Macronix Int. Co. Ltd, Hsinchu
fDate :
5/1/2007 12:00:00 AM
Abstract :
A body-tied FinFET bandgap engineered (BE)-silicon-oxide-nitride-oxide-silicon (SONOS) nand Flash device is successfully demonstrated for the first time. BE-SONOS device with a BE oxide-nitride-oxide barrier is integrated in the FinFET structure with a 30-nm fin width. FinFET BE-SONOS can overcome the unsolvable tradeoff between retention and erase speed of the conventional SONOS. Compared with the current floating-gate Flash devices, FinFET BE-SONOS provides both retention and erase-speed performance, while eliminating the scaling limitations and is, thus, an important candidate for further scaling of nand Flash
Keywords :
MOSFET; NAND circuits; flash memories; memory architecture; 30 nm; FinFET BE-SONOS; NAND-type flash memory; bandgap engineered SONOS; body-tied FinFET; erase-speed performance; nitride trapping memory; retention performance; Electron traps; FinFETs; Flash memory; Interference; Laboratories; Nonhomogeneous media; Nonvolatile memory; Photonic band gap; SONOS devices; Tunneling; Bandgap engineered (BE)-SONOS; NAND Flash; body-tied FinFET; nitride trapping memory;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.895421
