Title :
Effect of Top Electrode Material on Resistive Switching Properties of
Film Memory Devices
Author :
Lin, Chih-Yang ; Wu, Chen-Yu ; Wu, Chung-Yi ; Lee, Tzyh-Cheang ; Yang, Fu-Liang ; Hu, Chenming ; Tseng, Tseung-Yuen
Author_Institution :
Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu
fDate :
5/1/2007 12:00:00 AM
Abstract :
The influence of top electrode material on the resistive switching properties of ZrO2-based memory film using Pt as a bottom electrode was investigated in this letter. In comparison with Pt/ZrO2/Pt and Al/ZrO2/Pt devices, the Ti/ZrO2/Pt device exhibits different resistive switching current-voltage (I- V) curve, which can be traced and reproduced by a dc voltage more than 1000 times only showing a little decrease of resistance ratio between high and low resistance states. Furthermore, the broad dispersions of resistive switching characteristics in the Pt/ZrO2/Pt and Al/ZrO2/Pt devices are generally observed during successive resistive switching, but those dispersions are suppressed by the device using Ti as a top electrode. The reliability results, such as cycling endurance and continuous readout test, are also presented. The write-read-erase-read operations can be over 104 cycles without degradation. No data loss is found upon successive readout after performing various endurance cycles
Keywords :
electrodes; platinum; random-access storage; switching; titanium; zirconium compounds; RRAM; Ti-ZrO2-Pt; cycling endurance; memory devices; memory film; nonvolatile memory; readout test; resistive random access memory; resistive switching properties; top electrode material; write-read-erase-read operations; Electrodes; Metal-insulator structures; Nonvolatile memory; Radio frequency; Random access memory; Semiconductor device manufacture; Sputtering; Switches; Testing; Voltage; $hbox{ZrO}_{2}$; Nonvolatile memory; resistive random access memory (RRAM); resistive switching;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.894652