High-performance self-aligned SiGeC HBT with selectively grown Si1-x-yGexCy base by UHV/CVD

Si_1-x-yGe_xC_y selective epitaxial growth (SEG) was performed by cold-wall, ultrahigh-vacuum chemical vapor deposition, and the effects of incorporating C on the crystallinity of Si_1-x-yGe_xC_y layers and the performance of a self-aligned SiGeC heterojunction bipolar transistor (HBT) were evaluated. A Si_1-x-yGe_xC_y layer with good crystallinity was obtained by optimizing the growth conditions. Device performance was significantly improved by incorporating C, as a result of applying Si_1-x-yGe_xC_y SEG to form the base of a self-aligned HBT. Fluctuations in device performance were suppressed by alleviating the lattice strain. Furthermore, since the B out diffusion could be suppressed by incorporating C, the cutoff frequency was able to be increased with almost the same base resistance. A maximum oscillation frequency of 174 GHz and an emitter coupled logic gate-delay time of 5.65 ps were obtained at a C content of 0.4%, which shows promise for future ultrahigh-speed communication systems.