DocumentCode :
811367
Title :
A general design methodology for the optimal multiple-field-limiting-ring structure using device simulator
Author :
Cheng, Xu ; Sin, Johnny K O ; Shen, John ; Huai, Yong-jin ; Li, Rui-zhen ; Wu, Yu ; Kang, Bao-wei
Author_Institution :
Dept. of Electron. Eng., Beijing Polytech. Univ., China
Volume :
50
Issue :
11
fYear :
2003
Firstpage :
2273
Lastpage :
2279
Abstract :
A design methodology for the optimal multiple-field-limiting-ring (FLR) termination structure is proposed. In the methodology, a simple modeling structure is developed to find the so-called BV-spacing curve, from which the optimal structure can be obtained directly without trial and error. The results given by the methodology is in excellent agreement with the experimental results. The applicability of the methodology is also investigated in a wide scope, which shows that the methodology has a very good performance in the medium-voltage-range FLR termination design.
Keywords :
doping profiles; leakage currents; power MOSFET; power semiconductor devices; semiconductor device breakdown; semiconductor device models; surface potential; 600 V; BV-spacing curve; VDMOSFET terminal design; breakdown voltages; device simulator; general design methodology; high-voltage power semiconductor devices; leakage current profile; medium-voltage-range FLR termination design; modeling structure; optimal multiple-field-limiting-ring structure; optimization process; oxide-charge density; ring-to-ring spacing; substrate-doping profile; surface potential profile; Computational modeling; Design methodology; Doping profiles; Medical simulation; Microelectronics; Power semiconductor devices; Semiconductor device doping; Semiconductor devices; Silicon compounds; Substrates;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2003.815132
Filename :
1239056
Link To Document :
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