DocumentCode
811367
Title
A general design methodology for the optimal multiple-field-limiting-ring structure using device simulator
Author
Cheng, Xu ; Sin, Johnny K O ; Shen, John ; Huai, Yong-jin ; Li, Rui-zhen ; Wu, Yu ; Kang, Bao-wei
Author_Institution
Dept. of Electron. Eng., Beijing Polytech. Univ., China
Volume
50
Issue
11
fYear
2003
Firstpage
2273
Lastpage
2279
Abstract
A design methodology for the optimal multiple-field-limiting-ring (FLR) termination structure is proposed. In the methodology, a simple modeling structure is developed to find the so-called BV-spacing curve, from which the optimal structure can be obtained directly without trial and error. The results given by the methodology is in excellent agreement with the experimental results. The applicability of the methodology is also investigated in a wide scope, which shows that the methodology has a very good performance in the medium-voltage-range FLR termination design.
Keywords
doping profiles; leakage currents; power MOSFET; power semiconductor devices; semiconductor device breakdown; semiconductor device models; surface potential; 600 V; BV-spacing curve; VDMOSFET terminal design; breakdown voltages; device simulator; general design methodology; high-voltage power semiconductor devices; leakage current profile; medium-voltage-range FLR termination design; modeling structure; optimal multiple-field-limiting-ring structure; optimization process; oxide-charge density; ring-to-ring spacing; substrate-doping profile; surface potential profile; Computational modeling; Design methodology; Doping profiles; Medical simulation; Microelectronics; Power semiconductor devices; Semiconductor device doping; Semiconductor devices; Silicon compounds; Substrates;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2003.815132
Filename
1239056
Link To Document