Title :
Analytical model for p-channel MOSFETs
Author :
Moon, Byung-Jong ; Park, Chan-Kwang ; Rho, Kwang-Myoung ; Lee, Kwyro ; Shur, Michael ; Fjeldly, Tor A.
Author_Institution :
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
fDate :
12/1/1991 12:00:00 AM
Abstract :
An analytical model for p-channel MOSFETs is described. The model is based on the unified charge control model (UCCM), which describes both the subthreshold and the above-threshold regimes using one continuous equation. Also derived and incorporated into the model is an equation for the dependence of the hole mobility on gate-to-source voltage and threshold voltage. The model makes it possible to propose a simple and unambiguous characterization procedure for extracting device parameters. Detailed measurements of capacitance-voltage and current-voltage characteristics of p-channel MOSFETs with different gate lengths are reported. Results are in excellent agreement with experimental results. The model is ideally suited for applications in computer-aided design software for simulation of both digital and analog circuits, and for automated parameter extraction
Keywords :
carrier mobility; insulated gate field effect transistors; semiconductor device models; C-V characteristics; above-threshold regimes; analytical model; automated parameter extraction; computer-aided design software; current-voltage characteristics; gate-to-source voltage; hole mobility; p-channel MOSFETs; subthreshold regime; threshold voltage; unified charge control model; Analytical models; Application software; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Current-voltage characteristics; Equations; Length measurement; MOSFETs; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
