Low-threshold InGaAs/GaAs strained-layer surface emitting lasers with two 45° angle etched total reflection mirrors

Author

Chao, C.P. ; Merz, J.L.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA

Volume

38

Issue

12

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

2690

Lastpage

2691

Abstract

Summary form only given. An InGaAs/GaAs strained-layer IPSEL (in-plane surface emitting laser) structure with two 45° dry-etched mirrors and a highly reflecting bottom quarter-wavelength stack is reported. It has a record low continuous-wave (CW) threshold current at 10 mA. The laser structure consists of a conventional double-heterostructure single-quantum-well (80-Å In_0.2Ga_0.8As/100-Å GaAs) laser structure on top of a quarter-wave stack (25 pairs of 695-Å GaAs/830-Å AlAs), which serves as a distributed Bragg reflector (~99%) after 45° angle etching

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser accessories; mirrors; semiconductor junction lasers; sputter etching; 10 mA; 45° angle etching; CW threshold current; GaAs-AlAs; IPSEL structure; In_0.2Ga_0.8As-GaAs; distributed Bragg reflector; double-heterostructure single-quantum-well; dry-etched mirrors; highly reflecting bottom quarter-wavelength stack; strained-layer surface emitting lasers; total reflection mirrors; Bandwidth; Etching; Gallium arsenide; Indium gallium arsenide; Laser modes; Length measurement; Quantum well lasers; Surface emitting lasers; Threshold current; Waveguide lasers;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.158699

Filename

158699