Temperature Dependence of Substrate and Drain–Currents in Bulk FinFETs

The temperature (T) dependence of I_SUB and I_D in bulk FinFETs was investigated for the first time. Both n- and p-channel devices with thin fin body width showed the abnormal increase of I_SUB at high T, which can be explained by stress-induced bandgap narrowing, I_SUB and I_D were investigated as parameters of T and fin body width (W_fin). It was shown that thinner W_fin gets higher stress. With increasing T, the I_D of n-channel bulk FinFET with thinner W _fin is increased since electron mobility is increased by tensile stress. The threshold voltage decrease becomes significant with decreasing W_fin by the bandgap narrowing, which contributes to the I_D increase. The I_SUB/I_D of n-channel bulk FinFET was studied by changing W_fin and 1/ V _DS as a parameter of T