Title :
Strained InGaAs-GaAs quantum-well lasers by impurity-induced disordering with very low threshold and moderate blue-shift
Author :
Zou, W.X. ; Merz, J.L. ; Coldren, Larry A. ; Fu, R.J. ; Hong, Choong
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA
fDate :
12/1/1991 12:00:00 AM
Abstract :
Summary form only given. The authors report on strained InGaAs-QW impurity-induced disordering (IID) lasers having self-aligned structure with very low threshold current and moderate blue-shift of the lasing wavelength. The strained InGaAs-QW material employed was grown by MOCVD. The fabrication process is described. The authors believe that IID by Si diffusion is a very attractive approach for the fabrication of strained InGaAs-QW lasers
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor doping; semiconductor growth; semiconductor junction lasers; spectral line shift; vapour phase epitaxial growth; GaAs:Si; InGaAs-GaAs; MOCVD; Si diffusion; impurity-induced disordering; low threshold; moderate blue-shift; self-aligned structure; strained quantum well lasers; Distributed Bragg reflectors; Gallium arsenide; Mirrors; Power generation; Power lasers; Quantum well lasers; Sputter etching; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Electron Devices, IEEE Transactions on
