Title :
Improved ruggedness of a high-current vertical power DMOS
Author :
Kim, Maeng Jun ; Mukherjee, Sayan ; Young, John C.
Author_Institution :
North American Philips Corp., Briarcliff Manor, NY
fDate :
12/1/1991 12:00:00 AM
Abstract :
Summary form only given. An attempt was made to improve the ruggedness of a VDMOS through design and process innovation. To this end, a 10-A VDMOS with breakdown voltage in excess of 60 V was fabricated, tested, and compared with other devices. The VDMOS fabricated showed much higher power dissipation capability and superior ruggedness when compared with other devices available in the industry. Experimental data show that the high Jpeak capability makes this VDMOS more reliable as a high-current power device and extends the safe operating range
Keywords :
insulated gate field effect transistors; power transistors; reliability; semiconductor technology; 10 A; 60 V; SOA extension; VDMOS; breakdown voltage; high-current power device; high-current vertical power DMOS; peak current tolerance; power dissipation capability; process innovation; ruggedness improvement; safe operating range; superior ruggedness; Diode lasers; Erbium-doped fiber lasers; Laser beams; Molecular beam epitaxial growth; Optical waveguides; Planarization; Power generation; Quantum well lasers; Threshold current; Waveguide lasers;
Journal_Title :
Electron Devices, IEEE Transactions on
