Addendum to “Modeling MOSFET Drain Current Non-Gaussian Distribution With Power-Normal Probability Density Function” [Feb 14 154-156]

In our paper “Modeling MOSFET Drain Current Non-Gaussian Distribution with Power-Normal Probability Density Function” [1] published in IEEE Electron Device Letters, Feburary 2014, the analytic results are derived for power Gaussian distribution (PGD) with integer only. It appears to be a limitation in practical application, where one may need non-integer for a more accurate model, e.g., . This addendum is to show that our analytic results, without any format change, are also applicable to non-integer . Therefore, the integer limitation can be stripped off from our model, which in fact is capable of providing continuous coverage.