• DocumentCode
    812277
  • Title

    Performance improvement of 1.52 μm (Ga,In)(N,As)/GaAs quantum well lasers on GaAs substrates

  • Author

    Hugues, M. ; Damilano, B. ; Barjon, J. ; Duboz, J.-Y. ; Massies, J. ; Ulloa, J.-M. ; Montes, M. ; Hierro, A.

  • Author_Institution
    Centre Nat. de la Recherche Scientifique, Sophia Antipolis, France
  • Volume
    41
  • Issue
    10
  • fYear
    2005
  • fDate
    5/12/2005 12:00:00 AM
  • Firstpage
    595
  • Lastpage
    596
  • Abstract
    (Ga,In)(N,As)/GaAs single quantum well lasers have been grown by molecular beam epitaxy. Room temperature pulsed operation at a wavelength of 1515 nm is achieved. As-cleaved 1000 μm-long lasers have a threshold current density of 4.06 kA/cm2 and a slope efficiency of 0.075 W/A per facet.
  • Keywords
    III-V semiconductors; current density; gallium compounds; indium compounds; molecular beam epitaxial growth; quantum well lasers; 1.52 micron; 1515 nm; GaAs substrates; GaInNAs-GaAs; molecular beam epitaxy; quantum well lasers; room temperature pulsed operation; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20050487
  • Filename
    1432538
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=812277