Reduction of low-frequency noise in n-p-n AlGaAs/GaAs HBT´s

Author

Costa, David ; Harris, J.S.

Author_Institution

Stanford Univ., CA

Volume

38

Issue

12

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

2718

Lastpage

2719

Abstract

Summary form only given. Low-frequency measurements were made (100 Hz to 10 MHz) of n-p-n AlGaAs/GaAs HBTs with and without AlGaAs ledges as a function of bias current, geometry, aluminum mole fraction in the emitter, and temperature. These measurements show the existence of three distinct regions in the noise spectra: a 1/f shape associated with the base surface, a Lorentzian shape associated with the forward-biased emitter-base junction, and a flat region associated with shot noise. The measurements also indicate that the anomalous noise bump is generated by a trap in the AlGaAs near the surface of the emitter-base junction

Keywords

III-V semiconductors; aluminium compounds; electron device noise; electron traps; gallium arsenide; heterojunction bipolar transistors; 1/f shape; 100 Hz to 10 MHz; Al mode fraction; AlGaAs ledges; AlGaAs-GaAs; LF noise-reduction; Lorentzian shape; anomalous noise bump; bias current; flat region; forward-biased emitter-base junction; geometry; low-frequency noise; n-p-n HBT; noise spectra; shot noise; temperature; trap; Aluminum; Current measurement; Gallium arsenide; Geometry; Low-frequency noise; Noise generators; Noise measurement; Noise shaping; Shape measurement; Temperature measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.158754

Filename

158754