Title :
Characteristics of 0.8- and 0.2-μm gate length InxGa 1-xAs/In0.52Al0.48As/InP (0.53⩽x⩽0.70) modulation-doped field-effect transistors at cryogenic temperatures
Author :
Lai, Richard ; Bhattacharya, Pallab K. ; Yang, David ; Brock, Timothy L. ; Alterovitz, Samuel A. ; Downey, Alan N.
Author_Institution :
Center for High-Frequency Microelectron., Michigan Univ., Ann Arbor, MI, USA
fDate :
10/1/1992 12:00:00 AM
Abstract :
The performance characteristics of InP-based pseudomorphic MODFETs with varying the In composition (0.53⩽x⩽0.70), which changes the strain in the channel, were studied. The temperature was varied in the range of 40-300 K, and the devices had gate lengths L g of 0.8 and 0.2 μm. The analysis predicts an increase in the intrinsic cutoff frequency with increasing In composition and decreasing temperature and gate length. Also, the analysis predicts that the increase in cutoff frequency with decreasing temperature is less significant with increasing In composition and decreasing gate length. Preliminary experimental results show that as In composition increases from 0.53 to 0.70, fT increases by 30-40%, and as the temperature decreases from 300 to 40 K, fT improves by 15-30%, both for 0.8- and 0.2-μm devices
Keywords :
III-V semiconductors; aluminium compounds; cryogenics; equivalent circuits; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; solid-state microwave devices; 0.2 micron; 0.8 micron; 40 to 300 K; DC characteristics; In composition; InxGa1-xAs-In0.52Al0.48 As-InP; MBE growth; cryogenic temperatures; intrinsic cutoff frequency; microwave characteristics; modulation-doped field-effect transistors; performance characteristics; pseudomorphic MODFETs; submicron gate length; Capacitive sensors; Cryogenics; Epitaxial layers; FETs; HEMTs; Indium compounds; Indium gallium arsenide; MODFETs; Performance analysis; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
