Single-event effect ground test issues

Author

Koga, R.

Author_Institution

Aerosp. Corp., El Segundo, CA, USA

Volume

43

Issue

2

fYear

1996

fDate

4/1/1996 12:00:00 AM

Firstpage

661

Lastpage

670

Abstract

Ground-based single event effect (SEE) testing of microcircuits permits characterization of device susceptibility to various radiation induced disturbances, including: (1) single event upset (SEU) and single event latchup (SEL) in digital microcircuits; (2) single event gate rupture (SEGR), and single event burnout (SEB) in power transistors; and (3) bit errors in photonic devices. These characterizations can then be used to generate predictions of device performance in the space radiation environment. This paper provides a general overview of ground-based SEE testing and examines in critical depth several underlying conceptual constructs relevant to the conduct of such tests and to the proper interpretation of results. These more traditional issues are contrasted with emerging concerns related to the testing of modern, advanced microcircuits

Keywords

aerospace testing; integrated circuit testing; radiation effects; radiation hardening (electronics); semiconductor device testing; space vehicle electronics; SRAM; bit errors; device performance; digital microcircuits; ground test; heavy ions; neutrons; photonic devices; power transistors; predictions; protons; radiation induced disturbances; semiconductor device susceptibility; single event burnout; single event gate rupture; single event latchup; single event upset; space radiation environment; Belts; Character generation; Cosmic rays; Electrons; Ionization; Power transistors; Semiconductor materials; Single event upset; Stochastic processes; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.490909

Filename

490909