DocumentCode
812945
Title
Electrical characteristics of TiB2 for ULSI applications
Author
Choi, Chang Sik ; Wang, Qingfeng ; Osburn, Carlton M. ; Ruggles, Gary A. ; Shah, Ayan S.
Author_Institution
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Volume
39
Issue
10
fYear
1992
fDate
10/1/1992 12:00:00 AM
Firstpage
2341
Lastpage
2345
Abstract
The work function of TiB2 was measured using Fowler-Nordheim tunneling in MOS capacitors, Schottky diode current measurements, capacitance-voltage techniques, and contact resistance. The resulting data place the Fermi level of TiB2 about 0.9 eV below the silicon conduction band. Given this barrier height, Schottky diodes of TiB2/p-Si exhibit ohmic characteristics, but the contact resistance of TiB2 to n+ junctions is an order of magnitude higher than the generally desired value. Boron outdiffusion from TiB2 into underlying silicon was observed at temperatures of 1000°C and greater. Boron diffusion from TiB2 into silicon above 1000°C is enhanced compared to the conventionally accepted value of the boron diffusivity
Keywords
Fermi level; Schottky effect; Schottky-barrier diodes; VLSI; chemical interdiffusion; contact resistance; metallisation; titanium compounds; tunnelling; work function; B diffusivity; Fermi level; Fowler-Nordheim tunneling; MOS capacitors; Schottky diode current; TiB2-Si; ULSI applications; capacitance-voltage techniques; contact resistance; ohmic characteristics; outdiffusion; work function; Boron; Capacitance measurement; Contact resistance; Current measurement; Electric variables; Electrical resistance measurement; MOS capacitors; Schottky diodes; Silicon; Tunneling;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.158806
Filename
158806
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