مرکز منطقه ای اطلاع رساني علوم و فناوري - High Density and Low Leakage Current in <formula formulatype="inline"> <img src="/images/tex/18627.gif" alt=" \\hbox {TiO}_{2}"> </formula> MIM Capacitors Processed at 300 <formula formulatype="inline"> <img src="/images/tex/18628.gif" alt="^{\\circ} \\hb

Title :

High Density and Low Leakage Current in $\\hbox {TiO}_{2}$ MIM Capacitors Processed at 300 $^{\\circ} \\hb</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Cheng, C.H. ; Lin, S.H. ; Jhou, K.Y. ; Chen, W.J. ; Chou, C.P. ; Yeh, F.S. ; Hu, J. ; Hwang, M. ; Arikado, T. ; McAlister, S.P. ; Chin, Albert</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Dept. of Mech. Eng., Nat. Chiao Tung Univ., Hsinchu</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>29</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>8</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2008</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>845</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>847</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>We report Ir/TiO<sub>2</sub>/TaN metal-insulator-metal capacitors processed at only 300degC, which show a capacitance density of 28 fF/mum<sup>2</sup> and a leakage current of 3 times 10<sup>-8</sup> (25degC) or 6 times 10<sup>-7</sup> (125degC) A/cm<sup>2</sup> at -1 V. This performance is due to the combined effects of 300degC nanocrystallized high-kappa TiO<sub>2</sub>, a high conduction band offset, and high work-function upper electrode. These devices show potential for integration in future very-large-scale-integration technologies.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>MIM devices; VLSI; capacitors; nanostructured materials; tantalum compounds; titanium compounds; Ir; TaN; TiO<sub>2</sub>; high conduction band offset; high work-function upper electrode; metal-insulator-metal capacitors; nanocrystallized high-kappa TiO<sub>2</sub>; temperature 125 degC; temperature 25 degC; temperature 300 C; very-large-scale-integration technologies; voltage -1 V; Capacitance; Crystallization; Dielectric substrates; Electrodes; Isolation technology; Leakage current; MIM capacitors; Plasma temperature; Surface resistance; Very large scale integration; <formula formulatype=$ $ hbox{TiO}_{2}$; High $kappa$; Ir; metal–insulator–metal (MIM);