DocumentCode :
813078
Title :
On the Source of Jitter in a Room-Temperature Nanoinjection Photon Detector at 1.55 \\mu \\hbox {m}
Author :
Memis, Omer Gokalp ; Katsnelson, Alex ; Mohseni, Hooman ; Yan, Minjun ; Zhang, Shuang ; Hossain, Tim ; Jin, Niu ; Adesida, Ilesanmi
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL
Volume :
29
Issue :
8
fYear :
2008
Firstpage :
867
Lastpage :
869
Abstract :
The transient response of a nanoinjection infrared photon detector was studied by exploring the relation between lateral charge transfer and jitter. The jitter of the device was measured to be 15 ps at room temperature. The jitter was almost independent of the pulse power, even after device saturation. Spatial maps for delay and amplitude were acquired. The carrier velocity was extracted from the measurements and compared with that of the simulation model. The jitter due to transit time was calculated to be in agreement with the measured data, which indicated that the jitter is primarily transit time limited.
Keywords :
infrared detectors; jitter; nanoelectronics; device saturation; jitter source; nanoinjection infrared photon detector; room-temperature nanoinjection photon detector; temperature 293 K to 298 K; transient response; wavelength 1.55 mum; Delay; Indium gallium arsenide; Indium phosphide; Infrared detectors; Jitter; Noise level; Photonics; Superconducting photodetectors; Temperature; Transient response; Jitter; lateral transport; nanoinjection; photon detector;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2008.2001123
Filename :
4571134
Link To Document :
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