Title :
Power law GaAs MESFET model
Author :
Conger, Jeff ; Shur, Michael S. ; Peczalski, Andrzej
Author_Institution :
Cray Research Inc., Chippewa Falls, WI, USA
fDate :
10/1/1992 12:00:00 AM
Abstract :
A power law model for the GaAs MESFET is presented. It is shown that the model is applicable to MESFETs with high or low pinch-off voltages by simply varying the exponent of the power law term. The model parameters are quickly and easily obtained by a straightforward characterization process. The model was implemented in a GaAs integrated circuit simulator and used to simulate device current-voltage characteristics
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; GaAs; GaAs MESFET; current-voltage characteristics; high pinch off voltage; integrated circuit simulator; low pinch-off voltages; power law model; Circuit simulation; FETs; Gallium arsenide; Impact ionization; Integrated circuit modeling; Low voltage; MESFETs; Substrates; Threshold voltage; Transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
