Title :
High-Gain Amplifiers With Amorphous-Silicon Thin-Film Transistors
Author :
Sambandan, Sanjiv
Author_Institution :
Electron. Mater. & Devices Lab., Palo Alto Res. Center, Palo Alto, CA
Abstract :
This letter demonstrates amplifier design with amorphous-hydrogenated-silicon thin-film transistors (TFTs) for high dc gain. High dc gain is achieved by using positive feedback to improve load impedance. The transfer characteristics of the amplifier are resistant to threshold voltage shift in the TFTs.
Keywords :
DC amplifiers; amorphous semiconductors; elemental semiconductors; feedback amplifiers; hydrogen; silicon; thin film transistors; DC gain; Si:H; a-Si:H TFT; amorphous-hydrogenated-silicon; high-gain amplifiers; load impedance; positive feedback; thin-film transistors; transfer characteristics; Chemical elements; Driver circuits; Feedback; Geometry; Helium; Impedance; Signal design; Thin film transistors; Threshold voltage; Transconductance; Amplifier; thin-film transistor (TFT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2000951
