Title :
Novel Gate-All-Around Poly-Si TFTs With Multiple Nanowire Channels
Author :
Liao, Ta-Chuan ; Tu, Shih-Wei ; Yu, Ming H. ; Lin, Wei-Kai ; Liu, Cheng-Chin ; Chang, Kuo-Jui ; Tai, Ya-Hsiang ; Cheng, Huang-Chung
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu
Abstract :
The novel gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with multiple nanowire channels (MNCs) have been, for the first time, fabricated using a simple process to demonstrate high-performance electrical characteristics and high immunity to short-channel effects (SCEs). The nanowire channel with high body-thickness-to-width ratio (TFin/WFin), which is approximately equal to one, was realized only with a sidewall-spacer formation. Moreover, the unique suspending MNCs were also achieved to build the GAA structure. The resultant GAA-MNC TFTs showed outstanding three-dimensional (3-D) gate controllability and excellent electrical characteristics, which revealed a high on/off current ratio ( > 108), a low threshold voltage, a steep subthreshold swing, a near-free drain-induced barrier lowering, as well as an excellent SCE suppression. Therefore, such high-performance GAA-MNC TFTs are very suitable for applications in system-on-panel and 3-D circuits.
Keywords :
elemental semiconductors; nanowires; silicon; thin film transistors; 3D circuit; 3D gate controllability; Si; drain-induced barrier lowering; electrical characteristics; gate-all-around thin film transistor; multiple nanowire channels; short channel effect; sidewall-spacer formation; system-on-panel; threshold voltage; Circuits; Displays; Electric variables; Etching; Fabrication; Geometry; MOSFETs; Nanoscale devices; Strips; Thin film transistors; Gate-all-around (GAA); nanowire; poly-Si; thin-film transistors (TFTs); three-dimensional (3-D) device;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2001176
