DocumentCode :
813282
Title :
Multiport Thru Deembedding for MOSFET Characterization
Author :
Brinkhoff, James ; Issaoun, Ammar ; Rustagi, Subhash C. ; Lin, Fujiang
Author_Institution :
Inst. of Microelectron., Agency for Sci., Technol. & Res. (A*STAR), Singapore
Volume :
29
Issue :
8
fYear :
2008
Firstpage :
923
Lastpage :
926
Abstract :
This letter proposes the use of a simplified single-step thru deembedding method for the multiport characterization of MOSFETs. Compared with other methods, it takes up less chip area and requires less measurement steps, both particularly important factors for multiport characterization. The thru method is compared with the multiport open-short method. Measurements of a four-port MOSFET, with corresponding deembedding structures, are used to extract the MOSFET equivalent circuit elements over bias. These results show the validity and usefulness of multiport measurements and the thru deembedding method for MOSFET characterization.
Keywords :
MOSFET; equivalent circuits; multiport networks; semiconductor device measurement; deembedding method; equivalent circuit elements; four-port MOSFET measurement; multiport MOSFET characterization; Area measurement; Equivalent circuits; Integrated circuit interconnections; MOSFET circuits; Measurement errors; Parasitic capacitance; Particle measurements; Probes; Semiconductor device measurement; Testing; Deembedding; MOSFETs; equivalent circuits; multiport measurements;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2008.2001175
Filename :
4571151
Link To Document :
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