Title :
Monolithically integrated 1.55 μm photoreceiver-laser driver optoelectronic integrated circuit
Author :
Pradhan, S. ; Bhattacharya, P. ; Liu, W.K.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
8/15/2002 12:00:00 AM
Abstract :
An InP-based monolithically integrated optoelectronic integrated circuit (OEIC), consisting of a 1.55 μm photoreceiver and a laser driver, is demonstrated. The circuit, designed and fabricated with heterojunction bipolar transistors, has a -3 dB bandwidth of 8.1 GHz and bit-error-rate measurements show that the circuit can operate at 10 Gbit/s. The OEIC is tested with a singlemode 1.55 μm laser connected externally
Keywords :
III-V semiconductors; bipolar integrated circuits; driver circuits; frequency response; indium compounds; integrated optoelectronics; optical receivers; 1.55 micron; 10 Gbit/s; 8.1 GHz; HBT circuit; InP; front-end photoreceiver; high-speed WDM phototransceivers; monolithically integrated OEIC; photoreceiver-laser driver OEIC; single-mode laser; transimpedance amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020607
