Title :
Bevelling technique for low surface roughness based on CMP
Author :
Ferguson, R.S. ; Fobelets, K. ; Cohen, L.F. ; Pawlik, M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK
fDate :
8/15/2002 12:00:00 AM
Abstract :
Chemical-mechanical polishing (CMP) has been applied and optimised for bevelling of semiconductor heterojunctions for the first time. The optimised technique, based on the use of a glass pad, results in a dramatically decreased surface roughness. The technique is compared to mechanical bevelling. The advantage of this smooth bevel for different material characterisation techniques is discussed
Keywords :
chemical mechanical polishing; semiconductor heterojunctions; surface topography; Dektak profile; Syton; bevel edge rounding; bevelling technique; chemical-mechanical polishing; glass pad; low surface roughness; optimised technique; semiconductor heterojunctions; surface finish; surface state dependent material characterisation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020654
