Evaluation of the optical-coupling efficiency of InGaAlAs-InGaAsP butt joint using a novel multiple butt-jointed laser

Author

Kitatani, T. ; Shinoda, K. ; Tsuchiya, T. ; Sato, H. ; Ouchi, K. ; Uchiyama, H. ; Tsuji, S. ; Aoki, M.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

Volume

17

Issue

6

fYear

2005

fDate

6/1/2005 12:00:00 AM

Firstpage

1148

Lastpage

1150

Abstract

We quantitatively estimated the optical-coupling efficiency at the InGaAlAs-InGaAsP butt-joint (BJ) part by fabricating a novel multiple-butt-jointed (MBJ) laser. The lasing characteristics of InGaAlAs-InGaAsP MBJ lasers formed by in situ cleaning process showed a high optical-coupling efficiency of approximately 98%, which is comparable to that of a conventional InGaAsP-InGaAsP MBJ lasers. Thus, high-quality BJ-based heterointegration of InGaAlAs and InGaAsP was successfully demonstrated.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical fabrication; quantum well lasers; semiconductor epitaxial layers; surface cleaning; InGaAlAs-InGaAsP; InGaAlAs-InGaAsP butt joint; high-quality heterointegration; in situ cleaning process; laser fabrication; lasing characteristics; multiple butt-jointed laser; multiple quantum well lasers; optical-coupling efficiency; Cleaning; Contamination; Epitaxial growth; Epitaxial layers; Etching; Indium phosphide; Optical waveguides; Quantum well devices; Scanning electron microscopy; Semiconductor lasers; Optical communications; semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.846561

Filename

1432758