DocumentCode :
814319
Title :
Electrostatic charge and field sensors based on micromechanical resonators
Author :
Riehl, Patrick S. ; Scott, Karen L. ; Muller, Richard S. ; Howe, Roger T. ; Yasaitis, John A.
Volume :
12
Issue :
5
fYear :
2003
Firstpage :
577
Lastpage :
589
Abstract :
We have developed highly sensitive electrometers and electrostatic fieldmeters (EFMs) that make use of micromechanical variable capacitors. Modulation of the input capacitance, a technique used in macroscale instruments such as the vibrating-reed electrometer and the field-mill electrostatic voltmeter (ESV), moves the detection bandwidth away from the 1/f-noise-limited regime, thus improving the signal-to-noise ratio (SNR). The variable capacitors are implemented by electrostatically driven resonators with differential actuation and sensing to reduce drive-signal feedthrough. The resonators in the electrometer utilize a balanced comb structure to implement harmonic sensing. Two fabrication methods were employed - a hybrid technology utilizing fluidically self-assembled JFETs and SOI microstructures, and an integrated process from Analog Devices combining 0.8-μm CMOS and 6-μm-thick polysilicon microstructures. All devices operate in ambient air at room temperature. Measured data from one electrometer with an input capacitance of 0.7 pF indicates a charge resolution of 4.5 aC rms (28 electrons) in a 0.3 Hz bandwidth. The resolution of this electrometer is unequaled by any known ambient-air-operated instrument over a wide range of source capacitances. The EFM has a resolution of 630 V/m, the best reported figure for a MEMS device.
Keywords :
capacitors; electrometers; electrostatic devices; micromechanical resonators; microsensors; voltmeters; 0.3 Hz; 0.7 pF; 0.8 micron; CMOS integrated process; JFET; MEMS variable capacitor; SOI microstructure; Si; comb structure; electrometer; electrostatic charge sensor; electrostatic field sensor; electrostatic fieldmeter; electrostatic voltmeter; fluidic self-assembly; harmonic sensing; hybrid technology; micromechanical resonator; polysilicon microstructure; signal-to-noise ratio; Bandwidth; Capacitance; Capacitors; Electrostatics; Fabrication; Instruments; Micromechanical devices; Microstructure; Signal to noise ratio; Voltmeters;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2003.818066
Filename :
1240129
Link To Document :
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