Fast polarisation and wavelength switching in quasi-index guided GaInAsP twin-stripe lasers by direct current modulation

Author

Wolf, T. ; Kappeler, F.

Author_Institution

Siemens AG Res. Labs., Munich, West Germany

Volume

137

Issue

1

fYear

1990

fDate

2/1/1990 12:00:00 AM

Firstpage

49

Lastpage

54

Abstract

Current-controlled polarisation and wavelength switching in 1.3 μm GaInAsP ridge-wavelength twin-stripe (RWTS) lasers with a properly designed effective index profile is reported. In CW operation at room temperature, an output power of 4 mW can be switched from TM- to TE-polarisation with an extinction ratio of 15 dB by a control current of only 4 mA. The polarisation switching is accompanied by a wavelength shift of 17 nm. Under fast direct current modulation, intrinsic optical response times of less than 235 ps are obtained. A self-consistent analysis of the active lateral waveguide shows that the switching effect is based on the deformation of the TE-mode profile resulting from antiguiding controlled by a small injection current

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; light polarisation; optical modulation; optical waveguides; semiconductor junction lasers; 1.3 micron; 235 ps; 4 mA; 4 mW; CW operation; GaInAsP-InP twin stripe lasers; TE-mode profile; TE-polarisation; TM polarisation; active lateral waveguide; antiguiding; control current; current controlled polarisation; direct current modulation; effective index profile; extinction ratio; intrinsic optical response times; output power; ridge waveguide semiconductor laser;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings J

Publisher

iet

ISSN

0267-3932

Type

jour

Filename

45773