• DocumentCode
    814833
  • Title

    Intrinsic sensitivity of Cd1-xZnxTe semiconductors for digital radiographic imaging

  • Author

    Giakos, G.C. ; Guntupalli, R. ; De Abreu-Garcia, J.A. ; Shah, N. ; Vedantham, S. ; Suryanarayanan, S. ; Chowdhury, S. ; Patnekar, N. ; Sumrain, S. ; Mehta, K. ; Evans, E. ; Orozco, A. ; Kumar, V. ; Ugweje, O. ; Moholkar, A.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Akron, OH, USA
  • Volume
    52
  • Issue
    5
  • fYear
    2003
  • Firstpage
    1559
  • Lastpage
    1565
  • Abstract
    The intrinsic sensitivity of cadmium zinc telluride (Cd1-xZnxTe) semiconductor detectors has been experimentally measured, within the X-ray diagnostic energy range. The results of this study indicate that the intrinsic efficiency of Cd1-xZnxTe can be increased by optimizing geometrical and physical detection parameters such as X-ray irradiation geometry, detector thickness, and applied electric field. These results indicate that Cd1-xZnxTe is a suitable candidate for digital imaging applications.
  • Keywords
    II-VI semiconductors; X-ray detection; cadmium compounds; diagnostic radiography; electric sensing devices; image sensors; zinc compounds; CdZnTe; X-ray detectors; X-ray diagnostic energy range; X-ray irradiation geometry; applied electric field; cadmium zinc telluride semiconductor detectors; detector intrinsic sensitivity; detector thickness; digital radiographic imaging; image enhancement; intrinsic material efficiency; Biomedical optical imaging; Image sensors; Optical imaging; Optical sensors; Radiography; Tellurium; X-ray detection; X-ray detectors; X-ray imaging; Zinc;
  • fLanguage
    English
  • Journal_Title
    Instrumentation and Measurement, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9456
  • Type

    jour

  • DOI
    10.1109/TIM.2003.818563
  • Filename
    1240172
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=814833