• DocumentCode
    815028
  • Title

    Low Noise Jfet with Integral Reset Diode

  • Author

    McKenzie, J.M. ; Witt, L.J.

  • Author_Institution
    Sandia Laboratories Albuquerque, New Mexico 87115
  • Volume
    21
  • Issue
    1
  • fYear
    1974
  • Firstpage
    794
  • Lastpage
    797
  • Abstract
    A low noise JFET has been built with a small diode diffused in the gate circuit. For these initial experiments the chips were bonded to an available 4-lead ceramic insulated header. Both dc and pulsed reset methods are possible. The present experiments with a dc reset method indicate that the device when optimized should give, at low count rates, similar resolution to opto-electronic feedback. An output count rate of 20,000 c/s at 6 keV adds 150 eV of noise.
  • Keywords
    Capacitance; Circuit noise; Detectors; Diodes; Gate leakage; Leak detection; Leakage current; Pulse amplifiers; Pulse circuits; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1974.4327552
  • Filename
    4327552
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=815028