Title :
Fabrication and Room-Temperature Single-Charging Behavior of Self-Aligned Single-Dot Memory Devices
Author :
Tang, Xiaohui ; Reckinger, Nicolas ; Bayot, Vincent ; Krzeminski, Christophe ; Dubois, Emmanuel ; Villaret, Alexandre ; Bensahel, Daniel-Camille
Author_Institution :
Microelectron. Lab, Univ. Catholique de Louvain, Louvain-la-Neuve
Abstract :
Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room temperature. In order to realize the final single-electron memory circuit, this paper investigates process repeatability, device uniformity in single-dot memory arrays, device scalability, and process transferability to an industrial application
Keywords :
Coulomb blockade; etching; nanotechnology; oxidation; semiconductor quantum dots; single electron devices; 293 to 298 K; Coulomb blockade effect; arsenic-assisted etching; nanotechnology; oxidation effects; self-aligned floating gate; self-aligned single-dot memory devices; single-charging behaviour; single-dot memory arrays; single-electron memory circuit; Circuits; Etching; Fabrication; Lithography; Nanocrystals; Nonvolatile memory; Oxidation; Scalability; Silicon; Single electron memory; Arsenic-assisted etching and oxidation effects; Coulomb blockade effect; nanotechnology; self-aligned floating gate; single-electron memory;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2006.883481
