DocumentCode :
81567
Title :
A Common Core Model for Junctionless Nanowires and Symmetric Double-Gate FETs
Author :
Sallese, Jean-Michel ; Jazaeri, Farzan ; Barbut, Lucian ; Chevillon, Nicolas ; Lallement, Christophe
Author_Institution :
EPFL, Lausanne, Switzerland
Volume :
60
Issue :
12
fYear :
2013
fDate :
Dec. 2013
Firstpage :
4277
Lastpage :
4280
Abstract :
In this paper, we evidence the link between the planar and cylindrical junctionless field effect transistors (JL-FETs) from the electrostatics and current point of view. In particular, we show that an approximate solution of the Poisson-Boltzmann equation for JL nanowires can be mapped on the planar double-gate topology generating only negligible mismatch, meaning that both devices can share the same core model as far as long channels are considered. These preliminary results are a first step toward a unification of compact models for JL-FETs.
Keywords :
Boltzmann equation; Poisson equation; field effect transistors; nanowires; semiconductor device models; Poisson-Boltzmann equation; common core model; cylindrical junctionless field effect transistors; electrostatics; junctionless nanowires; planar double-gate topology; symmetric double-gate FET; Doping; Logic gates; Mobile communication; Nanowires; Semiconductor device modeling; Semiconductor process modeling; Silicon; Double gate (DG); enhancement mode; field effect transistor (FET); junctionless; modeling; nanowires (NWs);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2013.2287528
Filename :
6655966
Link To Document :
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