DocumentCode
81567
Title
A Common Core Model for Junctionless Nanowires and Symmetric Double-Gate FETs
Author
Sallese, Jean-Michel ; Jazaeri, Farzan ; Barbut, Lucian ; Chevillon, Nicolas ; Lallement, Christophe
Author_Institution
EPFL, Lausanne, Switzerland
Volume
60
Issue
12
fYear
2013
fDate
Dec. 2013
Firstpage
4277
Lastpage
4280
Abstract
In this paper, we evidence the link between the planar and cylindrical junctionless field effect transistors (JL-FETs) from the electrostatics and current point of view. In particular, we show that an approximate solution of the Poisson-Boltzmann equation for JL nanowires can be mapped on the planar double-gate topology generating only negligible mismatch, meaning that both devices can share the same core model as far as long channels are considered. These preliminary results are a first step toward a unification of compact models for JL-FETs.
Keywords
Boltzmann equation; Poisson equation; field effect transistors; nanowires; semiconductor device models; Poisson-Boltzmann equation; common core model; cylindrical junctionless field effect transistors; electrostatics; junctionless nanowires; planar double-gate topology; symmetric double-gate FET; Doping; Logic gates; Mobile communication; Nanowires; Semiconductor device modeling; Semiconductor process modeling; Silicon; Double gate (DG); enhancement mode; field effect transistor (FET); junctionless; modeling; nanowires (NWs);
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2013.2287528
Filename
6655966
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