Efficient frequency-domain simulation technique for short-channel MOSFET

Author

Lee, Kyu-Il ; Lee, Chanho ; Shin, Hyungsoon ; Park, Young June ; Min, Hong Shick

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., South Korea

Volume

24

Issue

6

fYear

2005

fDate

6/1/2005 12:00:00 AM

Firstpage

862

Lastpage

868

Abstract

This paper proposes and investigates a short-channel MOSFET model down to a 0.1-μm regime for the frequency-domain analysis of the device operation through the harmonic balance technique. The efficiency and the preciseness of our method are validated by comparison of simulation results with the two-dimensional time-domain simulation tool, MEDICI. Along with the carrier transport model, the displacement current components are included in the terminal current equations for the extended analysis under external circuit environments.

Keywords

MOSFET; circuit simulation; frequency-domain analysis; semiconductor device models; time-domain analysis; 0.1 micron; MEDICI; carrier transport model; displacement current components; extended analysis; frequency-domain simulation; harmonic balance; harmonic distortion; nonquasistatic effect; short-channel MOSFET; terminal current equations; time-domain simulation; Analytical models; Circuit simulation; Computational modeling; Frequency domain analysis; Harmonic analysis; Harmonic distortion; MOSFET circuits; Medical simulation; Semiconductor device modeling; Time domain analysis; Harmonic balance (HB) technique; harmonic distortion; nonquasistatic (NQS) effect; short-channel MOSFET;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/TCAD.2005.847896

Filename

1432877