DocumentCode :
815954
Title :
Characterization of erbium-silicided Schottky diode junction
Author :
Jang, Moongyu ; Kim, Yarkyeon ; Shin, Jaeheon ; Lee, Seongjae
Author_Institution :
Future Technol. Res. Div., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Volume :
26
Issue :
6
fYear :
2005
fDate :
6/1/2005 12:00:00 AM
Firstpage :
354
Lastpage :
356
Abstract :
Trap density, lifetime, and the Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted trap density, lifetime, and Schottky barrier height for hole are determined as 1.5×1013 traps/cm2, 3.75 ms and 0.76 eV, respectively. By using the developed method, the interface of the Schottky diode can be evaluated quantitatively.
Keywords :
Schottky barriers; Schottky diodes; equivalent circuits; erbium compounds; ErSiO2; Schottky barrier height; Schottky diode interface; equivalent circuit method; erbium-silicided Schottky diode junction; trap density; Current measurement; Electron traps; Equivalent circuits; MOSFETs; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicides; Silicon; Temperature; Equivalent circuit; Schottky diode; erbium-silicide; trap;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2005.848074
Filename :
1432897
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=815954
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