Space radiation effects in InP solar cells

Author

Walters, R.J. ; Messenger, S.R. ; Summers, G.P. ; Burke, E.A. ; Keavney, C.J.

Author_Institution

US Naval Res. Lab., Washington, DC, USA

Volume

38

Issue

6

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

1153

Lastpage

1158

Abstract

InP solar cells and mesa diodes grown by metalorganic chemical vapor deposition (MOCVD) were irradiated with electrons and protons at room temperature. The radiation-induced defects (RIDs) were characterized by deep level transient spectroscopy (DLTS), and the degradation of the solar cell performance was determined through I -V measurements. The nonionizing energy loss (NIEL) of electrons and protons in InP was calculated as a function of energy from 1 to 200 MeV and compared to the measured defect introduction rates. A linear dependence was evident. InP solar cells showed significantly more radiation resistance than c-Si or GaAs/Ge cells under 1 MeV electron irradiation. Using the calculated InP damage rates and measured damage factors, the performance of InP solar cells as a function of orbital altitude and time in orbit was predicted and compared with the performance of c-Si solar cells in the same environment. In all cases, the InP cells showed highly superior radiation resistance

Keywords

III-V semiconductors; deep level transient spectroscopy; electron beam effects; indium compounds; proton effects; semiconductor device testing; solar cells; 1 to 200 MeV; DLTS; I-V characteristics; InP solar cells; MOCVD; damage factors; damage rates; defect introduction rates; electron irradiation; mesa diodes; nonionizing energy loss; orbital altitude; proton irradiation; radiation resistance; radiation-induced defects; solar cell performance degradation; space radiation; time in orbit; Chemical vapor deposition; Diodes; Electrical resistance measurement; Electrons; Extraterrestrial measurements; Indium phosphide; MOCVD; Photovoltaic cells; Protons; Radiation effects;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.124088

Filename

124088