Title :
Nuclear and damage effects in Si produced by irradiations with medium energy protons
Author :
Alurralde, M. ; Victoria, M. ; Caro, A. ; Gavillet, D.
Author_Institution :
Paul Scherrer Inst., Villigen, Switzerland
fDate :
12/1/1991 12:00:00 AM
Abstract :
Calculations have been performed to obtain the types of ions and their recoil energies that result from the irradiation of Si with intermediate energy (70-600-MeV) protons. A version of the High Energy Transport Code (HETC) was employed for this purpose. A first dosimetry measurement confirms the production of Na and Be as a result of the irradiation. The binary collision approximation, as used in the MARLOWE code, is then used to estimate the density of defect clusters in the resulting damaged structure
Keywords :
dosimetry; elemental semiconductors; proton effects; silicon; 70 to 600 MeV; Be ions; HETC; High Energy Transport Code; MARLOWE code; Na ions; Si; binary collision approximation; damage effects; defect cluster density; dosimetry; medium energy protons; proton irradiation; recoil energies; DRAM chips; Dosimetry; Extraterrestrial measurements; Ionization; Neutrons; Nuclear electronics; Production; Protons; Random access memory; Single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
