DocumentCode :
816162
Title :
A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature
Author :
Howell, Robert S. ; Buchoff, Steven ; Van Campen, Stephen ; McNutt, T.R. ; Ezis, Andris ; Nechay, Bettina ; Kirby, Christopher F. ; Sherwin, Marc E. ; Clarke, R.C. ; Singh, Ranbir
Author_Institution :
Northrop Grumman Corp., Linthicum, MD
Volume :
55
Issue :
8
fYear :
2008
Firstpage :
1807
Lastpage :
1815
Abstract :
This paper presents the development and demonstration of large-area 10-kV 4H-SiC DMOSFETs that maintain a classically stable low-leakage normally off subthreshold characteristic when operated at les200degC. This is achieved by an additional growth (epitaxial regrowth) of a thin epitaxial layer on top of already implanted p-well regions in conjunction with a N20-based gate oxidation process. Additionally, the design space of the DMOSFET structure was explored using analytical and numerical modeling together with experimental verification. The resulting 0.15-cm2 active 0.43-cm2 die DMOSFET with 10-kV breakdown provides IDS = 8 A at a gate field of 3 MV/cm, along with a subthreshold current at VGS = 0 V that decreases from 1 muA (6.7 muA/cm2) at 25degC to 0.4 muA (2.7 muA/cm2) at 200degC.
Keywords :
epitaxial growth; leakage currents; oxidation; power MOSFET; silicon compounds; wide band gap semiconductors; SiC; epitaxial regrowth; oxidation; power DMOSFET; stable low-leakage; stable subthreshold behavior; thin epitaxial layer; voltage 10 kV; Analytical models; Epitaxial layers; MOSFETs; Oxidation; Process design; Semiconductor process modeling; Silicon carbide; Switching loss; Temperature; Voltage; Power MOSFETs; power switching; silicon carbide; subthreshold behavior;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2008.928204
Filename :
4578852
Link To Document :
بازگشت