DC and Transient Performance of 4H-SiC Double-Implant MOSFETs

Author

Losee, Pete A. ; Matocha, Kevin ; Arthur, Stephen D. ; Nasadoski, Jeffrey ; Stum, Zachary ; Garrett, Jerome L. ; Schutten, Michael ; Dunne, Greg ; Stevanovic, Ljubisa

Author_Institution

Semicond. Technol. Lab., GE Global Res., Niskayuna, NY

Volume

55

Issue

8

fYear

2008

Firstpage

1824

Lastpage

1829

Abstract

SiC vertical MOSFETs were fabricated and characterized, achieving blocking voltages around 1 kV and specific on-resistances as low as R_SP,ON=8.3 mOmegamiddotcm². DC and transient characteristics are shown. Room and elevated temperature (up to 200degC) 600 V/5 A inductive switching performance of the SiC MOSFETs are shown with turn-on and turn-off transients of approximately 20-40 ns.

Keywords

MOSFET; Schottky diodes; characteristics measurement; semiconductor device measurement; silicon compounds; transient analysis; wide band gap semiconductors; SiC; current 5 A; current-voltage characteristics; double-implant MOSFET; inductive switching; room-temperature static characteristics; temperature 293 K to 298 K; transient performance; turn-off transients; turn-on transients; vertical MOSFET; voltage 600 V; Fabrication; Insulated gate bipolar transistors; Laboratories; MOSFETs; Neodymium; Silicon carbide; Switching converters; Switching loss; Temperature; Voltage; Body diode; DMOSFET; SiC MOSFET; inductive switching;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.926592

Filename

4578865