Correlation between channel hot-electron degradation and radiation-induced interface trapping in N-channel LDD devices

Author

Huang, D.H. ; King, E.E. ; Wang, J.J. ; Ormond, R. ; Palkuti, L.J.

Author_Institution

Adv. Res. & Appl. Corp., Sunnyvale, CA, USA

Volume

38

Issue

6

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

1336

Lastpage

1341

Abstract

It is shown that the correlation model developed in previous work to determine hot-carrier device lifetime from radiation-induced interface state data can be extended to lightly-doped drain (LDD) devices by selecting different, but equivalent, failure criteria. Excellent agreement between the model and experimental data is shown for LDD devices from several different manufacturers. These results indicate that a radiation test can be used as a quick alternative to a voltage stress test for predicting hot-carrier-induced device lifetime. Charge pumping measurement results are presented that demonstrate the basis for such a correlation

Keywords

MOS integrated circuits; hot carriers; inspection; insulated gate field effect transistors; integrated circuit testing; radiation hardening (electronics); semiconductor device testing; MOSFETs; N-channel LDD devices; channel hot-electron degradation; charge pumping measurement; correlation model; experimental data; failure criteria; predicting hot-carrier-induced device lifetime; radiation test; radiation-induced interface trapping; voltage stress test; Charge measurement; Charge pumps; Current measurement; Degradation; Hot carriers; Interface states; Life testing; Stress; Virtual manufacturing; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.124114

Filename

124114