Charge collection in GaAs MESFETs and MODFETs

Author

Buchner, S. ; Kang, K. ; Tu, D.W. ; Knudson, A.R. ; Campbell, A.B. ; McMorrow, D. ; Srinivas, V. ; Chen, Y.J.

Author_Institution

Martin Marietta Lab., Baltimore, MD, USA

Volume

38

Issue

6

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

1370

Lastpage

1376

Abstract

A comparison of the amount of charge collected at the drains of GaAs MESFETs irradiated with pulsed laser light and ions and having different gate lengths shows orders of magnitude more charge collected for 0.1 μm MESFETs than for 1.2 μm MESFETs manufactured using different processes. Analyses of the dependence of the photocurrent pulses on gate and drain voltages, temperature, and light intensity suggest that the enhanced charge collection is primarily due to modulation of the channel width by positive charge trapped in the vicinity of the channel. Enhanced charge collection via channel modulation also occurs in pseudomorphic MODFETs. Pulses with characteristics similar to those produced by laser light, i.e. large amplitudes and long decay times, were obtained when 0.1 μm MESFETs were irradiated with He and Si ions. These results reveal the important role played by traps in determining SEU sensitivity in GaAs MESFETs with short gate lengths

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; high electron mobility transistors; ion beam effects; laser beam effects; radiation hardening (electronics); 0.1 micron; 1.2 micron; GaAs; He ions; MESFETs; MODFETs; SEU sensitivity; Si ions; channel modulation; drain voltages; enhanced charge collection; gate lengths; light intensity; photocurrent pulses; pulsed ion beams; pulsed laser light; role played by traps; semiconductors; temperature; trapped positive charge; Gallium arsenide; HEMTs; MESFETs; MODFETs; Manufacturing processes; Optical pulses; Photoconductivity; Pulse width modulation; Space vector pulse width modulation; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.124119

Filename

124119