Title :
Limitation factor of the bandwidth for InGaAs/InP monolithic photoreceivers
Author :
Matsuda, Kenichi ; Kubo, Minoru ; Otsuka, Nobuyuki ; Shibata, Jun
Author_Institution :
Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
fDate :
12/1/1989 12:00:00 AM
Abstract :
The authors demonstrate a limiting factor on the bandwidth for InGaAs/InP monolithic photoreceivers that achieves the effect of shortening the gate length. The bandwidth is compared for three types of receivers. The output resistance of the FETs integrated in the receivers is measured, and a drastic reduction in the frequency range from 10 Hz to 1 kHz is observed. This reduction is thought to be caused by traps existing at the interface between the substrate and the FET channel. Considering this effect, the frequency characteristics of the three types of receivers agree well with the results of computer simulation. The factors that limit the 3-dB bandwidth on the amplifier side are also clarified
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; photodetectors; receivers; FET channel; III-V semiconductors; InGaAs-InP monolithic photoreceivers; bandwidth; computer simulation; frequency range; gate length; limiting factor; output resistance; traps; Bandwidth; Circuits; FETs; Feedback; Frequency; Indium gallium arsenide; Indium phosphide; Optical amplifiers; Optical devices; Photodiodes;
Journal_Title :
Lightwave Technology, Journal of
