Radiation evaluation of commercial ferroelectric nonvolatile memories

Author

Benedetto, J.M. ; De Lancey, W.M. ; Oldham, T.R. ; McGarrity, J.M. ; Tipton, C.W. ; Brassington, M. ; Fisch, D.E.

Author_Institution

Harry Diamond Lab., Adelphi, MD, USA

Volume

38

Issue

6

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

1410

Lastpage

1414

Abstract

Ferroelectric (FE) on complementary metal-oxide-semiconductor (CMOS) 4-bit nonvolatile memories, 8-bit octal latches (with and without FE), and process control test chips were used to establish a baseline characterization of the radiation response of CMOS/FE integrated devices and to determine whether the additional FE processing caused significant degradation to the baseline CMOS process. Functional failure of all 4-bit memories and octal latches occurred at total doses of between 2 and 4 krad(Si), most likely due to field-oxide effects in the underlying CMOS. No significant difference was observed between the radiation response of devices with and without the FE film in this commercial process

Keywords

CMOS integrated circuits; SRAM chips; ferroelectric storage; radiation hardening (electronics); 2×10³ to 4×10³ rad; 4 kbit; CMOS; baseline characterization; commercial memories; commercial process; ferroelectric nonvolatile memories; field-oxide effects; radiation hardness evaluation; radiation response; CMOS process; CMOS technology; Capacitors; Ferroelectric materials; Iron; Nonvolatile memory; Random access memory; Semiconductor films; Silicon; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.124125

Filename

124125