DocumentCode
817044
Title
Proton and heavy ion upsets in GaAs MESFET devices
Author
Weatherfold, T.R. ; Tran, L. ; Stapor, W.J. ; Petersen, E.L. ; Langworthy, J.B. ; McMorrow, D. ; Abdel-Kader, W.G. ; McNulty, P.J.
Author_Institution
SFA Inc., Landover, MD, USA
Volume
38
Issue
6
fYear
1991
fDate
12/1/1991 12:00:00 AM
Firstpage
1460
Lastpage
1466
Abstract
Proton and heavy SEU data has been obtained for devices made by several GaAs MESFET manufacturers. Proton energy dependence and proton and heavy ion upset cross sections are reported. Measurements of charge collection from latches designed with various gate widths show that charge collection depths appear deeper than the 1 μm depth expected. Critical charge does not scale linearly with area. Proton upset cross sections are reduced with increased device width
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; ion beam effects; proton effects; semiconductor device testing; GaAs; MESFET; SEU; charge collection; critical charge; device width; heavy ion upsets; latches; proton energy dependence; proton upset cross section; BiCMOS integrated circuits; FETs; Foundries; Gallium arsenide; Laboratories; Logic functions; MESFET integrated circuits; Neutrons; Protons; Random access memory;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.124131
Filename
124131
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