DocumentCode :
817078
Title :
Drain contact boundary specification in windowed Monte-Carlo device analysis
Author :
Cheng, Doreen Y. ; Wu, Kechih ; Hwang, Chang G. ; Dutton, Robert W.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., CA, USA
Volume :
9
Issue :
10
fYear :
1988
Firstpage :
503
Lastpage :
505
Abstract :
To accurately analyze hot-carrier transport in a reasonable CPU time, a device analysis algorithm has been developed to couple the drift-diffusion model and the Monte Carlo (MC) method. In this algorithm, since the MC method is applied only in a portion of the device which is called the window, where to place the window boundaries in the device is extremely important for accurate simulations. To overcome the difficulties of window drain contact specification, the criterion of equivalent current collection has been defined, and an expression for calculating the drain contact length has been derived. The approach has been verified by good agreement between the simulation results and the experimental measurements.<>
Keywords :
Monte Carlo methods; electronic engineering computing; hot carriers; semiconductor device models; CPU time; device analysis algorithm; drain contact boundary specification; drain contact length; drift-diffusion model; equivalent current collection; hot-carrier transport; simulation; windowed Monte-Carlo device analysis; Algorithm design and analysis; Analytical models; Boundary conditions; Doping; Gallium arsenide; Geometry; Hot carrier effects; Hot carriers; MESFETs;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.17825
Filename :
17825
Link To Document :
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