High-current-gain submicrometer InGaAs/InP heterostructure bipolar transistors

Author

Nottenburg, Richard N. ; Chen, Yen-Kuang ; Panish, Morton B. ; Hamm, R. ; Humphrey, D.A.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

Volume

9

Issue

10

fYear

1988

Firstpage

524

Lastpage

526

Abstract

Common-emitter current gains of 115 and 170 are achieved in transistors with emitter dimensions as small as 0.3*3 and 0.8*3 mu m/sup 2/, respectively. These results are comparable with scaling experiments reported for Si bipolar devices and represent a significant improvement over AlGaAs/GaAs heterostructure bipolar transistors. Both the low surface recombination velocity and nonequilibrium carrier transport in the thin (800-AA) InGaAs base enhance the DC performance of these transistors.<>

Keywords

III-V semiconductors; bipolar transistors; gallium arsenide; indium compounds; solid-state microwave devices; 800 A; DC performance; III-V semiconductor; InGaAs-InP; common-emitter current gains; heterostructure bipolar transistors; high current gain; microwave device; nonequilibrium carrier transport; scaling; submicron device; surface recombination velocity; Bipolar transistors; Current density; Doping; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Radiative recombination; Wet etching;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.17832

Filename

17832