Title :
A GaAsMISFET using an MBE-grown CaF/sub 2/ gate insulator layer
Author :
Waho, Takao ; Yanagawa, Fumihiko
Author_Institution :
LSI Lab., NTT, Atsugi, Japan
Abstract :
The CaF/sub 2/ layer and an undoped GaAs channel layer grown by molecular beam epitaxy (MBE) on a semi-insulating GaAs
Keywords :
III-V semiconductors; gallium arsenide; insulated gate field effect transistors; molecular beam epitaxial growth; 1 micron; 64 mS; CaF/sub 2/-GaAs interface; III-V semiconductors; MBE-grown CaF/sub 2/; MISFET; WSi/sub x/ gate metal; gate insulator; gate-length; molecular beam epitaxy; self-aligned process; semiinsulating; transconductance; undoped GaAs channel layer; Crystallization; Dielectric materials; Etching; FETs; Gallium arsenide; Insulation; MISFETs; Molecular beam epitaxial growth; Substrates; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
