• DocumentCode
    817432
  • Title

    Modeling and design of GaAs traveling-wave electrooptic modulators based on capacitively loaded coplanar strips

  • Author

    Cui, Yansong ; Berini, Pierre

  • Author_Institution
    Sch. of Inf. Technol. & Eng., Univ. of Ottawa, Ont., Canada
  • Volume
    24
  • Issue
    1
  • fYear
    2006
  • Firstpage
    544
  • Lastpage
    554
  • Abstract
    GaAs traveling-wave electrooptic (EO) modulators based on capacitively loaded coplanar strips (CPSs) have been extensively modeled, and near-optimal designs are presented. The modulator operates in a push-pull mode, and the electrodes are coupled capacitively in series via the doped under layer. The best design reported herein has asymmetric CPSs 2 cm long and generated a figure of merit of about 9.36 GHz/V. This figure of merit is an improvement by a factor of about 2.5 over the best design reported to date for this modulator architecture. Modulator bandwidths in the range of 40-70 GHz (3 dB electrical) are predicted for various designs; the corresponding optical bandwidths are in the range of 75-110 GHz (3 dB optical).
  • Keywords
    III-V semiconductors; coplanar waveguides; electro-optical modulation; gallium arsenide; optical communication equipment; optical design techniques; optical waveguides; 40 to 110 GHz; GaAs; GaAs traveling-wave electrooptic modulators; capacitively loaded coplanar strips; optical design; Bandwidth; Electrodes; Electrooptic modulators; Electrooptical waveguides; Gallium arsenide; Optical attenuators; Optical modulation; Optical polymers; Optical signal processing; Strips; Capacitively loaded coplanar strips; GaAs traveling-wave electrooptic modulator; slow-wave structure; velocity matched;
  • fLanguage
    English
  • Journal_Title
    Lightwave Technology, Journal of
  • Publisher
    ieee
  • ISSN
    0733-8724
  • Type

    jour

  • DOI
    10.1109/JLT.2005.859851
  • Filename
    1589086