Guidelines for predicting single-event upsets in neutron environments [RAM devices]

Author

Letaw, John R. ; Normand, Eugene

Author_Institution

Severn Commun. Corp., Millersville, MD, USA

Volume

38

Issue

6

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

1500

Lastpage

1506

Abstract

A simple, graphical technique for estimating SEU rates in most neutron environments is provided. The technique is based on recently improved burst generation rate estimates for silicon. The method considers the point energy deposition from elastic, inelastic, and spallation reactions of neutrons in silicon over a wide range of incident energies (0.1 MeV to 1000 MeV). Alpha-particle energy deposition, which may cause errors in some devices, varies nonlinearly with increasing sensitive volume and is not considered

Keywords

SRAM chips; bipolar integrated circuits; environmental testing; integrated circuit testing; neutron effects; random-access storage; 0.1 to 1000 MeV; SEU rates; SRAM; Si; bipolar RAM; elastic reactions; graphical technique; inelastic reactions; neutron environments; neutron induced error function; point energy deposition; single-event upsets; spallation reactions; Aerospace electronics; Atmosphere; Error analysis; Guidelines; Ionization; Neutrons; Protons; Silicon; Single event transient; Substrates;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.124138

Filename

124138